Current crowding effects in SOI-SiGe HBTs with low doped emitters
Hall, S, Buiu, O, Lamb, A C, El Mubarek, H A W and Ashburn, P (2003) Current crowding effects in SOI-SiGe HBTs with low doped emitters. In, 33rd European Solid State Device Research Conference, Estoril , Portugal, 16 - 18 Sep 2003. , 303-306.
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Description/Abstract
Anomalous limitation of collector and base current in SOI SiGe HBTs at moderate bias levels is shown to be the result of current crowding and associated high injection effects induced by emitter de-biasing in the low doped emitter rather than in the base as is the case for homojunction transistors. Experimental results from devices with decreasing emitter window dimension, re-enforced by 2-D simulation, show clearly a trend for crowding at the centre as the emitter resistance increases. The results have significance for achieving full optimisation of HBTs and in particular, for medium power devices.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Event Dates: 16-18 September 2003 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 258695 |
| Date Deposited: | 23 Dec 2003 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Hall, S (Author) Buiu, O (Author) Lamb, A C (Author) El Mubarek, H A W (Author) Ashburn, P (Author) |
| Date: | 2003 |
| Additional Information: | Event Dates: 16-18 September 2003 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/258695 |
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