Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs


Abdul Rahim, A I, Marsh, C D, Ashburn, P and Booker, G R (2002) Low temperature in-situ phosphorus doped single-crystal silicon emitters for application in SiGe HBTs. At IEEE International Conference on Semiconductor Electronics, Penang, Malaysia, , 226-229.

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Description/Abstract

SiGe HBTs require low temperature processing in order to minimise boron out-diffusion from the base region. In this paper, a novel technique of producing low temperature in-situ doped single-crystal silicon emitters for application in SiGe HBTs is presented. The single-crystal silicon was deposited at a temperature of 670C in a UHV-compatible LPCVD cluster tool. Gummel plots of the fabricated transistors show very ideal base characteristics. An ultra low emitter resistance of 6.6ohm.um2 was also obtained. The very low emitter resistance is due to a very low oxygen dose of 5.3E13cm-2 at the single-crystal silicon emitter / silicon substrate interface.

Item Type: Conference or Workshop Item (Speech)
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 258698
Date Deposited: 23 Dec 2003
Last Modified: 27 Mar 2014 20:01
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/258698

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