Modeling of TED of boron in the underlying silicon layer due to boron implantation
Sabki, S N, Hashim, M R, Aziz, A A and Ashburn, P (2002) Modeling of TED of boron in the underlying silicon layer due to boron implantation. At IEEE International Conference on Semiconductor Electronics, Penang, Malaysia, , 324-328.
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Description/Abstract
Ion implantation's selectivity plays a very important role in forming the active device region of bipolar and MOS transistors. However the process of annealing for dopant activation causes problems of transient enhanced diffusion (TED) that make it difficult to realize sharp and shallow junction profiles. In this paper, measured and simulated boron profiles are compared for boron implants carried out at different energies.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 258699 |
| Date Deposited: | 23 Dec 2003 |
| Last Modified: | 16 Aug 2012 03:37 |
| Contributors: | Sabki, S N (Author) Hashim, M R (Author) Aziz, A A (Author) Ashburn, P (Author) |
| Date: | 2002 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/258699 |
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