Recent developments in deca-nanometer vertical MOSFETs
Hall, S, Donaghy, D, Buiu, O, Gili, E, Uchino, T, Kunz, V D, de Groot, C H and Ashburn, P (2003) Recent developments in deca-nanometer vertical MOSFETs. At Insulating Films on Semiconductors Conference, Barcelona, 18 - 20 Jun 2003.
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Description/Abstract
We report simulations and experimental work relating to innovations in the area of ultra short channel vertical transistors. The use of dielectric pockets can reduce the short channel effects of charge sharing and bulk punchthrough, thickened oxide regions can reduce parasitic overlap capacitance in source and drain. A narrow bandgap SiGe source can reduce considerably the gain of the parasitic bipolar transistor which is particularly severe in vMOSFETs.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: 18-20 June 2003 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 258714 |
| Date Deposited: | 05 Jan 2004 |
| Last Modified: | 02 Mar 2012 12:58 |
| Contributors: | Hall, S (Author) Donaghy, D (Author) Buiu, O (Author) Gili, E (Author) Uchino, T (Author) Kunz, V D (Author) de Groot, C H (Author) Ashburn, P (Author) |
| Date: | 2003 |
| Additional Information: | Event Dates: 18-20 June 2003 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/258714 |
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