Laser Ablation Deposition of Ga2S3-La2S3 Glass Films
Asal, R, Rivers, P E and Rutt, H N (1995) Laser Ablation Deposition of Ga2S3-La2S3 Glass Films. In, MRS 1995 Fall Meeting, Boston, USA,
Download
![[img]](http://eprints.soton.ac.uk/style/images/fileicons/application_pdf.png) |
PDF
Download (927Kb) |
Description/Abstract
Gallium - lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho3+, Er3+ etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and Ga/La ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodifled index.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Event Dates: 1995 |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science |
| Item ID: | 258754 |
| Date Deposited: | 19 Jan 2004 |
| Last Modified: | 08 Aug 2012 23:45 |
| Contributors: | Asal, R (Author) Rivers, P E (Author) Rutt, H N (Author) |
| Date: | 1995 |
| Additional Information: | Event Dates: 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 2 |
| URI: | http://eprints.soton.ac.uk/id/eprint/258754 |
Actions (login required)
 |
View Item |
