Laser Ablation Deposition of Ga2S3-La2S3 Glass Films

Asal, R, Rivers, P E and Rutt, H N (1995) Laser Ablation Deposition of Ga2S3-La2S3 Glass Films. In, MRS 1995 Fall Meeting, Boston, USA,


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Gallium - lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho3+, Er3+ etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and Ga/La ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodifled index.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: 1995
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science
ePrint ID: 258754
Date Deposited: 19 Jan 2004
Last Modified: 27 Mar 2014 20:01
Further Information:Google Scholar
ISI Citation Count:2

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