Recent developments in vertical MOSFETs and SiGe HBTs
Hall, Stephen, Buiu, Octavian, Ashburn, Peter and de Groot, C.H., Szczepanski, P (ed.) (2004) Recent developments in vertical MOSFETs and SiGe HBTs. Journal of Telecommunications and Information Technology, 1/2004, (1), 26-34.
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There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBTs in silicon on insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBTs with SOI-CMOS
|Keywords:||vertical MOSFETs, HBT, SOI|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||24 Mar 2004|
|Last Modified:||27 Mar 2014 20:01|
|Publisher:||National Institute of Communications, Warsaw|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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