Ultra low silicon substrate noise crosstalk using metal Faraday cages in a silicon-on-insulator technology.
Stefanou, S, Hamel, J, Baine, P, Armstrong, M, Gamble, H, Kraft, M and Kemhadjian, H A (2004) Ultra low silicon substrate noise crosstalk using metal Faraday cages in a silicon-on-insulator technology. IEEE Transactions on electron Devices, 51 No., 486-491.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 259082 |
| Date Deposited: | 27 Sep 2004 |
| Last Modified: | 02 Mar 2012 13:19 |
| Contributors: | Stefanou, S (Author) Hamel, J (Author) Baine, P (Author) Armstrong, M (Author) Gamble, H (Author) Kraft, M (Author) Kemhadjian, H A (Author) |
| Date: | March 2004 |
| Status: | Published |
| Publisher: | IEEE Transactions on Electron Devices |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/259082 |
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