A Physical Compact MOSFET Mobility Model Including Accurate Calculation of Saturation Surface Potential


Benson, J., D'Halleweyn, N. V., Mistry, K. and Redman-White, W. (2003) A Physical Compact MOSFET Mobility Model Including Accurate Calculation of Saturation Surface Potential. In, Nanotechnology Conference and Trade Show, San Francisco, USA, 23 - 27 Feb 2003.

Download

Full text not available from this repository.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: 23-27 February 2003
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 259892
Date Deposited: 03 Sep 2004
Last Modified: 01 Mar 2012 11:03
Contributors: Benson, J. (Author)
D'Halleweyn, N. V. (Author)
Mistry, K. (Author)
Redman-White, W. (Author)
Date: 2003
Additional Information: Event Dates: 23-27 February 2003
Status: Published
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/259892

Actions (login required)

View Item View Item