A Charge Model for SOI LDMOST with Lateral Doping Gradient


D'Halleweyn, N. V., Tiemeijer, L. F., Benson, J. and Redman-White, W. (2001) A Charge Model for SOI LDMOST with Lateral Doping Gradient. In, Proceedings of the International Symposium on Power Semiconductors, Devices & ICs, Osaka, Japan, , 291-294.

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Description/Abstract

In this paper we present a compact physically based charge model, which describes accurately the unique features of the SOI LDMOS. The model uses a modified Ward and Dutton partitioning scheme to account for the lateral doping gradient in the channel region and the overlap of the front gate over the drift region. The model has been implemented in SPICE3f5 and capacitance measurements are shown to agree well with the simulations.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: June 2001
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 259894
Date Deposited: 06 Sep 2004
Last Modified: 27 Mar 2014 20:02
Further Information:Google Scholar
ISI Citation Count:1
URI: http://eprints.soton.ac.uk/id/eprint/259894

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