A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour


D'Halleweyn, N., Benson, J., Swanenberg, M. and Redman-White, W. (2001) A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour. In, Proceedings of the Electrochemical Society Meeting, Washington DC, USA,

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Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: March 2001
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 259897
Date Deposited: 03 Sep 2004
Last Modified: 27 Mar 2014 20:02
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/259897

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