A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour
D'Halleweyn, N., Benson, J., Swanenberg, M. and Redman-White, W. (2001) A Compact Model for Silicon-on-Insulator LDMOST, Including Accumulation, Lateral Doping Gradient and High Side Behaviour. In, Proceedings of the Electrochemical Society Meeting, Washington DC, USA,
Download
Full text not available from this repository.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Event Dates: March 2001 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 259897 |
| Date Deposited: | 03 Sep 2004 |
| Last Modified: | 02 Mar 2012 11:40 |
| Contributors: | D'Halleweyn, N. (Author) Benson, J. (Author) Swanenberg, M. (Author) Redman-White, W. (Author) |
| Date: | 2001 |
| Additional Information: | Event Dates: March 2001 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/259897 |
Actions (login required)
 |
View Item |
