Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14
El Mubarek, H A W, Wang, Y, Bonar, J M, Hemment, P L F and Ashburn, P (2004) Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14. Material Research Society Symposium C Proceedings, MRS Spring Meeting, San Francisco
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260246 |
| Date Deposited: | 14 Apr 2005 |
| Last Modified: | 18 Aug 2012 03:50 |
| Contributors: | El Mubarek, H A W (Author) Wang, Y (Author) Bonar, J M (Author) Hemment, P L F (Author) Ashburn, P (Author) |
| Date: | April 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/260246 |
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