Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14


El Mubarek, H A W, Wang, Y, Bonar, J M, Hemment, P L F and Ashburn, P (2004) Effect of Fluorine Implantation on Boron Diffusion in Metastable Si0.86Ge0.14. Material Research Society Symposium C Proceedings, MRS Spring Meeting, San Francisco

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 260246
Date Deposited: 14 Apr 2005
Last Modified: 27 Mar 2014 20:03
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/260246

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