Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex
El Mubarek, H.A.W., Karunaratne, M., Bonar, J.M., Dilliway, G.D., Wang, Y., Hemment, P.L.F., Willoughby, A.F. and Ashburn, P. (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex. IEEE Transactions on Electron Devices, 52, (4), 518-526.
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| Item Type: | Article |
|---|---|
| Keywords: | fluorine, diffusion, TED, boron diffusion, SiGe |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260750 |
| Date Deposited: | 14 Apr 2005 |
| Last Modified: | 02 Mar 2012 13:20 |
| Contributors: | El Mubarek, H.A.W. (Author) Karunaratne, M. (Author) Bonar, J.M. (Author) Dilliway, G.D. (Author) Wang, Y. (Author) Hemment, P.L.F. (Author) Willoughby, A.F. (Author) Ashburn, P. (Author) |
| Date: | April 2005 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/260750 |
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