Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation


El Mubarek, H A W, Bonar, J M and Ashburn, P (2004) Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation. Technology and Device Meeting (ISTDM), Frankfurt Oder, Germany

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 260756
Date Deposited: 14 Apr 2005
Last Modified: 27 Mar 2014 20:03
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/260756

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