Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation
El Mubarek, H A W, Bonar, J M and Ashburn, P (2004) Reduction of boron transient enhanced diffusion in silicon and silicon-germanium by fluorine implantation. Technology and Device Meeting (ISTDM), Frankfurt Oder, Germany
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260756 |
| Date Deposited: | 14 Apr 2005 |
| Last Modified: | 01 Mar 2012 11:08 |
| Contributors: | El Mubarek, H A W (Author) Bonar, J M (Author) Ashburn, P (Author) |
| Date: | May 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/260756 |
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