Diffusion in SiGe: defect injection studies on Sb, As and B


Bonar, J M, Uppal, S, Karunaratne, M S A, Willoughby, A F and Ashburn, P (2004) Diffusion in SiGe: defect injection studies on Sb, As and B. Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 260757
Date Deposited: 14 Apr 2005
Last Modified: 27 Mar 2014 20:03
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/260757

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