Diffusion in SiGe: defect injection studies on Sb, As and B
Bonar, J M, Uppal, S, Karunaratne, M S A, Willoughby, A F and Ashburn, P (2004) Diffusion in SiGe: defect injection studies on Sb, As and B. Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260757 |
| Date Deposited: | 14 Apr 2005 |
| Last Modified: | 02 Mar 2012 11:58 |
| Contributors: | Bonar, J M (Author) Uppal, S (Author) Karunaratne, M S A (Author) Willoughby, A F (Author) Ashburn, P (Author) |
| Date: | October 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/260757 |
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