Growth of SiGe layers by GSMBE and their characterisation by X-ray techniques


Zhang, J, Neave, J H, Li, X B, Fewster, P F, El Mubarek, H A W, Ashburn, P, Mitrovic, I Z, Buiu, O and Hall, S (2004) Growth of SiGe layers by GSMBE and their characterisation by X-ray techniques. Electrochemical Soc. Meeting: SiGe Materials, Processing and Devices, Honolulu

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 260760
Date Deposited: 14 Apr 2005
Last Modified: 27 Mar 2014 20:03
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/260760

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