GSMBE growth and structural characterisation of SiGeC layers for HBT
Zhang, J, Neave, J H, Li, X B, Fewster, P F, El Mubarek, H A W, Ashburn, P, Mitrovic, I Z, Buiu, O and Hall, S (2004) GSMBE growth and structural characterisation of SiGeC layers for HBT. MBE2004
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 260765 |
| Date Deposited: | 14 Apr 2005 |
| Last Modified: | 01 Mar 2012 11:08 |
| Contributors: | Zhang, J (Author) Neave, J H (Author) Li, X B (Author) Fewster, P F (Author) El Mubarek, H A W (Author) Ashburn, P (Author) Mitrovic, I Z (Author) Buiu, O (Author) Hall, S (Author) |
| Date: | August 2004 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 1 |
| URI: | http://eprints.soton.ac.uk/id/eprint/260765 |
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