Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor


Mallik, Kanad, Chong, Lit Ho and de Groot, Kees (2004) Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor. At IVC-16 (16th International Vacuum Congress), Venice, Italy, 28 Jun - 02 Jul 2004.

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Description/Abstract

We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide. The VMOTT has significant advantages over the metal-oxide-semiconductor field effect transistor (MOSFET) in device scaling. In order to allow room-temperature operation of the VMOTT, the tunnel oxide has to be optimized for the metal-to-oxide barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel oxide by oxidising 5-10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 300-500 C. Some of the samples were subjected to a post-oxidation anneal in nitrogen ambient at 700 C. Fowler-Nordheim tunneling was observed clearly at room temperature, which was further confirmed at low temperatures in the samples oxidised at 500 C and annealed subsequently.

Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: 28th June - 02 July, 2004
Keywords: VMOTT, Fowler-Nordheim tunneling, TiO2
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 260965
Date Deposited: 10 Jun 2005
Last Modified: 27 Mar 2014 20:03
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/260965

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