Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor
Mallik, Kanad, Chong, Lit Ho and de Groot, Kees (2004) Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor. At IVC-16 (16th International Vacuum Congress), Venice, Italy, 28 Jun - 02 Jul 2004.
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We propose a new field effect transistor, the vertical metal-oxide tunnel transistor (VMOTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through the channel oxide. The VMOTT has significant advantages over the metal-oxide-semiconductor field effect transistor (MOSFET) in device scaling. In order to allow room-temperature operation of the VMOTT, the tunnel oxide has to be optimized for the metal-to-oxide barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel oxide by oxidising 5-10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 300-500 C. Some of the samples were subjected to a post-oxidation anneal in nitrogen ambient at 700 C. Fowler-Nordheim tunneling was observed clearly at room temperature, which was further confirmed at low temperatures in the samples oxidised at 500 C and annealed subsequently.
|Item Type:||Conference or Workshop Item (Speech)|
|Additional Information:||Event Dates: 28th June - 02 July, 2004|
|Keywords:||VMOTT, Fowler-Nordheim tunneling, TiO2|
|Divisions :||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Accepted Date and Publication Date:||
|Date Deposited:||10 Jun 2005|
|Last Modified:||31 Mar 2016 14:03|
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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- Observation of Fowler-Nordheim tunneling for room temperature operation of the vertical metal-oxide tunnel transistor. (deposited 10 Jun 2005) [Currently Displayed]
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