GSMBE growth and structural characterisation of SiGeC layers for HBT
Zhang, J., Neave, J.H., Li, X.B., Fewster, P.F., El Mubarek, H.A. W., Ashburn, P., Mitrovic, I.Z., Buiu, O. and Hall, S. (2005) GSMBE growth and structural characterisation of SiGeC layers for HBT. Journal of Crystal Growth, 278, 505-511.
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Description/Abstract
Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 261175 |
| Date Deposited: | 02 Sep 2005 |
| Last Modified: | 02 Mar 2012 11:39 |
| Contributors: | Zhang, J. (Author) Neave, J.H. (Author) Li, X.B. (Author) Fewster, P.F. (Author) El Mubarek, H.A. W. (Author) Ashburn, P. (Author) Mitrovic, I.Z. (Author) Buiu, O. (Author) Hall, S. (Author) |
| Date: | 2005 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 1 |
| URI: | http://eprints.soton.ac.uk/id/eprint/261175 |
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