Electrodeposition of Ni-Si Schottky Barriers
Kiziroglou, Michail E., Zhukov, Alexander A., Abdelsalam, Mamdouh, Li, Xiaoli, de Groot, Peter A. J., Bartlett, Philip N. and de Groot, Cornelis H. (2005) Electrodeposition of Ni-Si Schottky Barriers. IEEE Transactions on Magnetics, 41, (10), 2639-2641.
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Description/Abstract
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni–Si Schottky barrier is characterized and found to be of high quality for relatively low Si resistivities (1 - 2 Ohm cm), with extremely low reverse leakage. It is shown that a direct correlation exists among the electrodeposition potential, the roughness, and the coercivity of the films. A conductive seed layer or a back contact is not compulsory for electrodeposition on Si with resistivities up to 15 Ohm cm. This shows that electrodeposition of magnetic materials on Si might be a viable fabrication technique for magnetoresistance and spintronics applications.
| Item Type: | Article |
|---|---|
| Keywords: | Electrodeposition, Schottky barriers, Silicon, Spintronics |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 261491 |
| Date Deposited: | 20 Oct 2005 |
| Last Modified: | 26 Apr 2013 03:30 |
| Contributors: | Kiziroglou, Michail E. (Author) Zhukov, Alexander A. (Author) Abdelsalam, Mamdouh (Author) Li, Xiaoli (Author) de Groot, Peter A. J. (Author) Bartlett, Philip N. (Author) de Groot, Cornelis H. (Author) |
| Date: | October 2005 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 18 |
| URI: | http://eprints.soton.ac.uk/id/eprint/261491 |
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