110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression
Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Ashburn, P., Ward, P., Fiore, L., Petralia, R., Alemanni, C. and Messina, A. (2006) 110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression. IEEE Transactions on Electron Devices, 53, (3), 545-552.
This paper investigates how fluorine implantation can be used to suppress boron diffusion in the base of a double polysilicon silicon bipolar transistor and hence deliver a record fT of 110 GHz. Secondary Ion Mass Spectroscopy (SIMS) and transmission electron microscopy are used to characterize the effect of the fluorine implantation energy and dose, the anneal temperature and ambient and the germanium pre-amorphisation implant on the fluorine profiles. These results show that retention of fluorine in the silicon is maximised when a high-energy fluorine implant is combined with a low thermal budget inert anneal. TEM images show that a high-energy fluorine implant into germanium pre-amorphised silicon eliminates the end of range defects from the germanium implant and produces a band of dislocation loops deeper in the silicon at the range of the fluorine implant. Boron SIMS profiles show a suppression of boron diffusion for fluorine doses at and above 5?1014cm-2, but no suppression at lower fluorine doses. This suppression of boron diffusion correlates with the appearance on the SIMS profiles of a fluorine peak at a depth of approximately Rp/2, which is attributed to fluorine trapped in vacancy-fluorine clusters. The introduction of a fluorine implant at this critical fluorine dose into a bipolar transistor process flow leads to an increase in cut-off frequency from 46 to 60GHz. Further optimisation of the base-width and the collector profile leads to a further increase in cut-off frequency to 110GHz. Two factors are postulated to contribute to the suppression of boron diffusion by the fluorine implant. First, the elimination of the germanium end of range defects, and the associated interstitial population, by the fluorine implant, removes a source of transient enhanced diffusion. Second, any interstitials released by the dislocation loops at the range of the fluorine implant would be expected to recombine at the vacancy-fluorine clusters before reaching the boron profile.
|Keywords:||silicon, bipolar transistor, fluorine, diffusion, transient enhanced diffusion|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||23 Mar 2006|
|Last Modified:||31 Mar 2016 14:05|
Platform grant on high frequency silicon-based nano devices
Funded by: EPSRC (EP/C007077/1)
1 June 2005 to 31 May 2010
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)