Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors
Shiba, T, Kondo, M, Uchino, T, Murakoshi, H and Tamaki, Y (1996) Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors. IEEE Trans. Electron Devices, 43, 1281.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262152 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 11:39 |
| Contributors: | Shiba, T (Author) Kondo, M (Author) Uchino, T (Author) Murakoshi, H (Author) Tamaki, Y (Author) |
| Date: | 1996 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/262152 |
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