Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors


Shiba, T, Kondo, M, Uchino, T, Murakoshi, H and Tamaki, Y (1996) Effect of rapid epitaxy in-situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors. IEEE Trans. Electron Devices, 43, 1281.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 262152
Date Deposited: 27 Mar 2006
Last Modified: 27 Mar 2014 20:05
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262152

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