In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors


Shiba, T, Uchino, T, Ohnishi, K and Tamaki, Y (1996) In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors. IEEE Trans. Electron Devices, 43, 889.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 262154
Date Deposited: 27 Mar 2006
Last Modified: 27 Mar 2014 20:05
Further Information:Google Scholar
ISI Citation Count:3
URI: http://eprints.soton.ac.uk/id/eprint/262154

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