In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors
Shiba, T, Uchino, T, Ohnishi, K and Tamaki, Y (1996) In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors. IEEE Trans. Electron Devices, 43, 889.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 262154 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 13:42 |
| Contributors: | Shiba, T (Author) Uchino, T (Author) Ohnishi, K (Author) Tamaki, Y (Author) |
| Date: | 1996 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 3 |
| URI: | http://eprints.soton.ac.uk/id/eprint/262154 |
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