Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base


Uchino, T, Shiba, T, Kikuchi, T, Tamaki, Y, Watanabe, A and Kiyota, Y (1995) Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base. IEEE Trans. Electron Devices, 42, 406.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 262155
Date Deposited: 27 Mar 2006
Last Modified: 27 Mar 2014 20:05
Further Information:Google Scholar
ISI Citation Count:13
URI: http://eprints.soton.ac.uk/id/eprint/262155

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