Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base
Uchino, T, Shiba, T, Kikuchi, T, Tamaki, Y, Watanabe, A and Kiyota, Y (1995) Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base. IEEE Trans. Electron Devices, 42, 406.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 262155 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 14:04 |
| Contributors: | Uchino, T (Author) Shiba, T (Author) Kikuchi, T (Author) Tamaki, Y (Author) Watanabe, A (Author) Kiyota, Y (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 13 |
| URI: | http://eprints.soton.ac.uk/id/eprint/262155 |
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