A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts


Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts. IEEE Trans. Electron Devices, 40, 1563.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 262157
Date Deposited: 27 Mar 2006
Last Modified: 27 Mar 2014 20:05
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262157

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