A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts
Nanba, M, Uchino, T, Kondo, M, Nakamura, T, Kobayashi, T, Tamaki, Y and Tanabe, M (1993) A 64-GHz fT and 3.6-V BVceo Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts. IEEE Trans. Electron Devices, 40, 1563.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262157 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 13:20 |
| Contributors: | Nanba, M (Author) Uchino, T (Author) Kondo, M (Author) Nakamura, T (Author) Kobayashi, T (Author) Tamaki, Y (Author) Tanabe, M (Author) |
| Date: | 1993 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/262157 |
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