0.1-um CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD)
Uchino, T, Kiyota, Y and Shiba, T (1999) 0.1-um CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD). Symp. VLSI Technology Digest, Kyoto, 93.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262166 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 14:04 |
| Contributors: | Uchino, T (Author) Kiyota, Y (Author) Shiba, T (Author) |
| Date: | 1999 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/262166 |
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