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0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate system

0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate system
0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate system
937
Onai, T
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Tsujikawa, S
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Uchino, T
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Tsuchiya, R
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Ohnishi, K
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Fukuda, H
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Hisamoto, D
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Yamamoto, N
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Yugami, J
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Ichinose, K
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Ootsuka, F
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Onai, T
5b54b168-2b10-40c4-ab58-c7f84e05f641
Tsujikawa, S
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Uchino, T
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Tsuchiya, R
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Ohnishi, K
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Fukuda, H
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Hisamoto, D
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Yamamoto, N
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Yugami, J
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Ichinose, K
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Ootsuka, F
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Onai, T, Tsujikawa, S, Uchino, T, Tsuchiya, R, Ohnishi, K, Fukuda, H, Hisamoto, D, Yamamoto, N, Yugami, J, Ichinose, K and Ootsuka, F (1999) 0.1-μm CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate system. IEDM Tech. Digest, 937.

Record type: Article

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More information

Published date: 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262167
URI: http://eprints.soton.ac.uk/id/eprint/262167
PURE UUID: e4987d6d-06bb-425c-84aa-d4399dbb6191

Catalogue record

Date deposited: 27 Mar 2006
Last modified: 08 Jan 2022 05:46

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Contributors

Author: T Onai
Author: S Tsujikawa
Author: T Uchino
Author: R Tsuchiya
Author: K Ohnishi
Author: H Fukuda
Author: D Hisamoto
Author: N Yamamoto
Author: J Yugami
Author: K Ichinose
Author: F Ootsuka

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