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Improving gate oxide integrity (GOI) of a W/WNx/dual-polySi stacked-gate by using wet-hydrogen oxidation in 0.14-um CMOS devices

Improving gate oxide integrity (GOI) of a W/WNx/dual-polySi stacked-gate by using wet-hydrogen oxidation in 0.14-um CMOS devices
Improving gate oxide integrity (GOI) of a W/WNx/dual-polySi stacked-gate by using wet-hydrogen oxidation in 0.14-um CMOS devices
397
Ohnishi, K
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Yamamoto, N
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Uchino, T
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Hanaoka, Y
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Tsuchiya, R
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Nonaka, Y
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Tanabe, Y
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Umezawa, T
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Fukuda, N
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Mitani, S
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Shiba, T
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Ohnishi, K
c4849a03-ca8c-4f2e-95f6-9f6511a651ed
Yamamoto, N
818f46ee-f9c6-42a6-9e18-1ef5996d4566
Uchino, T
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Hanaoka, Y
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Tsuchiya, R
fa2358f5-cbc2-4c0b-b7ad-712b51bb5408
Nonaka, Y
ed12209c-d21f-4efe-8b03-7f8783b94906
Tanabe, Y
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Umezawa, T
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Fukuda, N
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Mitani, S
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Shiba, T
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Ohnishi, K, Yamamoto, N, Uchino, T, Hanaoka, Y, Tsuchiya, R, Nonaka, Y, Tanabe, Y, Umezawa, T, Fukuda, N, Mitani, S and Shiba, T (1998) Improving gate oxide integrity (GOI) of a W/WNx/dual-polySi stacked-gate by using wet-hydrogen oxidation in 0.14-um CMOS devices. IEDM Tech. Digest, 397.

Record type: Article

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More information

Published date: 1998
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 262168
URI: http://eprints.soton.ac.uk/id/eprint/262168
PURE UUID: ae295cc1-54b0-4ec1-9940-b367582c082d

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Date deposited: 27 Mar 2006
Last modified: 08 Jan 2022 17:42

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Contributors

Author: K Ohnishi
Author: N Yamamoto
Author: T Uchino
Author: Y Hanaoka
Author: R Tsuchiya
Author: Y Nonaka
Author: Y Tanabe
Author: T Umezawa
Author: N Fukuda
Author: S Mitani
Author: T Shiba

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