A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs


Uchino, T, Shiba, T, Ohnishi, K, Miyauchi, A, Nakata, M, Inoue, Y and Suzuki, T (1997) A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs. IEDM Tech. Digest, 479, 1406.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 262169
Date Deposited: 27 Mar 2006
Last Modified: 27 Mar 2014 20:05
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262169

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