A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs
Uchino, T, Shiba, T, Ohnishi, K, Miyauchi, A, Nakata, M, Inoue, Y and Suzuki, T (1997) A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-um CMOS ULSIs. IEDM Tech. Digest, 479, 1406.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262169 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 11:58 |
| Contributors: | Uchino, T (Author) Shiba, T (Author) Ohnishi, K (Author) Miyauchi, A (Author) Nakata, M (Author) Inoue, Y (Author) Suzuki, T (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/262169 |
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