A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology


Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. IEDM Tech. Digest, 443.

Download

Full text not available from this repository.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 262171
Date Deposited: 27 Mar 2006
Last Modified: 27 Mar 2014 20:05
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/262171

Actions (login required)

View Item View Item