A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology
Nanba, M, Kobayashi, T, Uchino, T, Nakamura, T, Kondo, M, Tamaki, Y, Iijima, S, Kure, T and Tanabe, M (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. IEDM Tech. Digest, 443.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262171 |
| Date Deposited: | 27 Mar 2006 |
| Last Modified: | 02 Mar 2012 12:21 |
| Contributors: | Nanba, M (Author) Kobayashi, T (Author) Uchino, T (Author) Nakamura, T (Author) Kondo, M (Author) Tamaki, Y (Author) Iijima, S (Author) Kure, T (Author) Tanabe, M (Author) |
| Date: | 1991 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/262171 |
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