Semi-insulating silicon by deep level doping for radio frequency applications
Mallik, Kanad, deGroot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi-insulating silicon by deep level doping for radio frequency applications. At 15th Surrey Ion Beam Centre Users' Workshop, Surrey, UK,
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Description/Abstract
Deep level Mn doping by ion implantation and RTA have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, resistivity increased nearly ten-fold. Interesting features, like trapping by end-of-range defects, out-diffusion and partial activation of Mn dopant atoms were observed.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 05/04/2006 |
| Keywords: | semi-insulating, high resistivity, Czochralski silicon |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262392 |
| Date Deposited: | 26 Apr 2006 |
| Last Modified: | 02 Mar 2012 12:21 |
| Contributors: | Mallik, Kanad (Author) deGroot, C.H. (Author) Ashburn, P. (Author) Wilshaw, P.R. (Author) |
| Date: | 2006 |
| Additional Information: | Event Dates: 05/04/2006 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/262392 |
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