Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials: some comments
Karunaratne, M.S.A., Bonar, J.M., Ashburn, P. and Willoughby, A.F.W. (2006) Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials: some comments. Journal of Materials Science, 41, (3), 1013-1016.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 262476 |
| Date Deposited: | 03 May 2006 |
| Last Modified: | 20 Aug 2012 03:56 |
| Contributors: | Karunaratne, M.S.A. (Author) Bonar, J.M. (Author) Ashburn, P. (Author) Willoughby, A.F.W. (Author) |
| Date: | March 2006 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/262476 |
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