'Semi-insulating' silicon using deep level impurity doping: problems and potential
'Semi-insulating' silicon using deep level impurity doping: problems and potential
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping with a deep donor and deep acceptor is effective in producing high resistivity p-type silicon if a single sufficiently deep donor is not available. Values of deep impurity levels and their concentrations ideally suited for the purpose have been evaluated. It is found that there is a trade-off between control over deep impurity doping concentration and the maximum achievable resistivity. Calculations of resistivity using published data for a number of transition metal impurities such as Au, Ag, Cr, Co, Pd, Pt, V and Mn show that V and Mn are best suited to achieve the goal if Au and Ag are disqualified due to high diffusivity. A comparison of Si:Mn with semi-insulating GaAs:Cr shows the limitations of the effectiveness of deep level doping in silicon.
high resistivity, Czochralski silicon, deep level impurity
517-524
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Falster, R.J.
1cfe39bf-c877-431a-b99f-0e9d5622bc07
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
June 2003
Mallik, Kanad
013bdafd-6ae0-463e-89a4-6ef1301c5c2f
Falster, R.J.
1cfe39bf-c877-431a-b99f-0e9d5622bc07
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, Kanad, Falster, R.J. and Wilshaw, P.R.
(2003)
'Semi-insulating' silicon using deep level impurity doping: problems and potential.
Semiconductor Science and Technology, 18 (6), .
Abstract
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping with a deep donor and deep acceptor is effective in producing high resistivity p-type silicon if a single sufficiently deep donor is not available. Values of deep impurity levels and their concentrations ideally suited for the purpose have been evaluated. It is found that there is a trade-off between control over deep impurity doping concentration and the maximum achievable resistivity. Calculations of resistivity using published data for a number of transition metal impurities such as Au, Ag, Cr, Co, Pd, Pt, V and Mn show that V and Mn are best suited to achieve the goal if Au and Ag are disqualified due to high diffusivity. A comparison of Si:Mn with semi-insulating GaAs:Cr shows the limitations of the effectiveness of deep level doping in silicon.
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Published date: June 2003
Keywords:
high resistivity, Czochralski silicon, deep level impurity
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 262675
URI: http://eprints.soton.ac.uk/id/eprint/262675
ISSN: 0268-1242
PURE UUID: fbdd370f-667a-43f4-a44c-dd9081fb3731
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Date deposited: 06 Jun 2006
Last modified: 14 Mar 2024 07:16
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Contributors
Author:
Kanad Mallik
Author:
R.J. Falster
Author:
P.R. Wilshaw
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