'Semi-insulating' silicon using deep level impurity doping: problems and potential
Mallik, Kanad, Falster, R.J. and Wilshaw, P.R. (2003) 'Semi-insulating' silicon using deep level impurity doping: problems and potential. Semiconductor Science and Technology, 18, (6), 517-524.
This is the latest version of this item.
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping with a deep donor and deep acceptor is effective in producing high resistivity p-type silicon if a single sufficiently deep donor is not available. Values of deep impurity levels and their concentrations ideally suited for the purpose have been evaluated. It is found that there is a trade-off between control over deep impurity doping concentration and the maximum achievable resistivity. Calculations of resistivity using published data for a number of transition metal impurities such as Au, Ag, Cr, Co, Pd, Pt, V and Mn show that V and Mn are best suited to achieve the goal if Au and Ag are disqualified due to high diffusivity. A comparison of Si:Mn with semi-insulating GaAs:Cr shows the limitations of the effectiveness of deep level doping in silicon.
|Keywords:||high resistivity, Czochralski silicon, deep level impurity|
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||06 Jun 2006|
|Last Modified:||02 Mar 2012 11:39|
|Contributors:||Mallik, Kanad (Author)
Falster, R.J. (Author)
Wilshaw, P.R. (Author)
|Further Information:||Google Scholar|
|ISI Citation Count:||8|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Available Versions of this Item
- 'Semi-insulating' silicon using deep level impurity doping: problems and potential. (deposited 06 Jun 2006) [Currently Displayed]
Actions (login required)