The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device
Chong, Lit Ho, Mallik, Kanad and de Groot, C. H. (2005) The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device. Microelectronic Engineering, 81, (2-4), 171-180.
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We propose a new field-effect transistor, the vertical metal insulator semiconductor tunnel transistor (VMISTT) which operates using gate modulation of the Fowler-Nordheim tunneling current through a metal insulator semiconductor (M-I-S) diode. The VMISTT has significant advantages over the metal-oxide-semiconductor field-effect transistor in device scaling. In order to allow room-temperature operation of the VMISTT, the tunnel oxide has to be optimized for the metal-to-insulator barrier height and the current-voltage characteristics. We have grown TiO2 layers as the tunnel insulator by oxidizing 7 and 10 nm thick Ti metal films vacuum-evaporated on silicon substrates, and characterized the films by current-voltage and capacitance-voltage techniques. The quality of the oxide films showed variations, depending on the oxidation temperatures in the range of 450-550 degrees C. Fowler-Nordheim tunneling was observed at low temperatures at bias voltage of 2 V and above and a barrier height of approximately 0.4 eV was calculated. Leakage currents present were due Schottky-barrier emission at room-temperature, and hopping at liquid nitrogen temperature.
|Keywords:||tunnel transistors; titanium dioxide; Fowler-Nordheim tunneling|
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||06 Jun 2006|
|Last Modified:||02 Mar 2012 13:42|
|Contributors:||Chong, Lit Ho (Author)
Mallik, Kanad (Author)
de Groot, C. H. (Author)
|Publisher:||ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS|
|Further Information:||Google Scholar|
|ISI Citation Count:||7|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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