High-temperature 434 MHz surface acoustic wave devices based on GaPO4


Hamidon, MN, Skarda, V, White, NM, Krispel, F, Krempl, P, Binhack, M and Buff, W (2006) High-temperature 434 MHz surface acoustic wave devices based on GaPO4. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 53, (12), 2465-2470.

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Description/Abstract

Research into surface acoustic wave (SAW) devices began in the early 1970s and led to the development of high performance, small size and high reproducability devices. Much research has now been done on the application of such devicesto consumer electronics, process monitoring and communicatrion systems. The use of novel materials such as gallium phosphate (GaPO4), extends the operating temperature of the elements. SAWevices based on this material operating at 434 MHz up to 800C, can be used for passive wireless sensor applications. Interdigital transducer (IDT) devices with Platinum/ Zirconium metallization and 1.4 micron finger-gap ratio of 1:1 have been fabricated using direct-write e-beam lithography and a lift-off process. The performance and long term stability of these devices has been studied, and the results are reported in this paper.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > EEE
ePrint ID: 263252
Date Deposited: 18 Dec 2006
Last Modified: 27 Mar 2014 20:06
Further Information:Google Scholar
ISI Citation Count:11
URI: http://eprints.soton.ac.uk/id/eprint/263252

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