Semi insulating Czochralski silicon for radio frequency applications
Semi insulating Czochralski silicon for radio frequency applications
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm−2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ωcm for the undoped substrate to a maximum of 10 kΩcm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices.
112122
Mallik, K.
c9c1ba23-0c13-4f61-b0c5-de3120d878f9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
2006
Mallik, K.
c9c1ba23-0c13-4f61-b0c5-de3120d878f9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, K., de Groot, C.H., Ashburn, P. and Wilshaw, P.R.
(2006)
Semi insulating Czochralski silicon for radio frequency applications.
Applied Physics Letters, 89, .
Abstract
Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm−2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ωcm for the undoped substrate to a maximum of 10 kΩcm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices.
Text
2006KanadSemiInsulatingSi.pdf
- Other
Restricted to Registered users only
Request a copy
More information
Published date: 2006
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263282
URI: http://eprints.soton.ac.uk/id/eprint/263282
ISSN: 0003-6951
PURE UUID: f1e7c1fe-3bc2-4ecb-a966-0ebd81079881
Catalogue record
Date deposited: 03 Jan 2007
Last modified: 15 Mar 2024 03:11
Export record
Contributors
Author:
K. Mallik
Author:
P.R. Wilshaw
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
