Semi-insulating Czochralski silicon for radio frequency applications
Mallik, K., de Groot, C.H., Ashburn, P. and Wilshaw, P.R. (2006) Semi-insulating Czochralski silicon for radio frequency applications. At European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland, 19 - 21 Sep 2006. , 435-438.
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Description/Abstract
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and partial activation of Mn dopant atoms have been observed.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: September 19th - 21st |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263285 |
| Date Deposited: | 03 Jan 2007 |
| Last Modified: | 20 Aug 2012 04:16 |
| Contributors: | Mallik, K. (Author) de Groot, C.H. (Author) Ashburn, P. (Author) Wilshaw, P.R. (Author) |
| Date: | 2006 |
| Additional Information: | Event Dates: September 19th - 21st |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263285 |
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