Semi-insulating Czochralski silicon for radio frequency applications
Semi-insulating Czochralski silicon for radio frequency applications
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and partial activation of Mn dopant atoms have been observed.
435-438
Mallik, K.
c9c1ba23-0c13-4f61-b0c5-de3120d878f9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
2006
Mallik, K.
c9c1ba23-0c13-4f61-b0c5-de3120d878f9
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wilshaw, P.R.
d2e7bcf3-ea4b-441a-8395-009e4ac8cb65
Mallik, K., de Groot, C.H., Ashburn, P. and Wilshaw, P.R.
(2006)
Semi-insulating Czochralski silicon for radio frequency applications.
European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland.
19 - 21 Sep 2006.
.
(doi:10.1109/ESSDER.2006.307731).
Record type:
Conference or Workshop Item
(Other)
Abstract
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kΩcm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and partial activation of Mn dopant atoms have been observed.
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Published date: 2006
Venue - Dates:
European Solid State Device Research Conference (ESSDERC), Montreux, Switzerland, 2006-09-19 - 2006-09-21
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 263285
URI: http://eprints.soton.ac.uk/id/eprint/263285
PURE UUID: 8c85e3d5-e1a1-4859-8c2e-234c7ab18801
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Date deposited: 03 Jan 2007
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
K. Mallik
Author:
P.R. Wilshaw
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