SiGeC HBTs: impact of C on device performance
Mitrovic, I.Z., El Mubarek, H.A.W., Buiu, O., Hall, S. and Ashburn, P. (2006) SiGeC HBTs: impact of C on device performance. At Nato Advanced Research Workshop, Sudak, Crimea, Ukraine, 15 - 19 Oct 2006.
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Description/Abstract
A UK consortium has recently reported an advanced RF platform technology, which includes SiGe Heterojunction Bipolar Transistors (HBT) on Silicon-On-Insulator (SOI). The study in this paper is the continuation of consortium work, focused on fabricating SiGeC HBTs and on impact of C (up to 1.6%) on device performance. The devices with low C content (0.45%) exhibit excellent performance and gain up to 500. The results indicate that C content to be used in these devices should be less than 1%.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: October 15th - 19th |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263287 |
| Date Deposited: | 03 Jan 2007 |
| Last Modified: | 02 Mar 2012 11:39 |
| Contributors: | Mitrovic, I.Z. (Author) El Mubarek, H.A.W. (Author) Buiu, O. (Author) Hall, S. (Author) Ashburn, P. (Author) |
| Date: | 2006 |
| Additional Information: | Event Dates: October 15th - 19th |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/263287 |
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