The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., Mitrovic, I.Z., El Mubarek, H.A.W. and Ashburn, P. (2006) The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates. Materials Science in Semiconductor Processing, 9, (4), 727-731.
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Description/Abstract
It is shown that the high base current and associated low-frequency noise typical for the SiGe HBTs prepared by the selective epitaxial growth of the collector and non-selective epitaxial growth of the base and emitter (SEG/NSEG technology), can be related to the mechanical stress between the collector and the field oxide surrounding the collector in these devices. The reason is that such stress provokes the viscous flow of the surface oxide producing an “action-at-distance” effect which results in the creation of additional fast and slow surface centers at the single crystal emitter and passivating oxide interface and in the oxide, respectively. The increase of fast center density increases the recombination base current component while the increase of slow center density increases the intensity of the 1/f noise source. As a result, any factor that promotes the reduction of the stress or the decrease of the intensity of the surface oxide viscous flow serves to decrease the base current and its 1/f noise. Thus we have found that we can mitigate the undesirable effects by the following solutions: increasing the temperature of the selective epitaxial growth of the collector TSEG, decreasing the temperature of the rapid thermal activation TRTA, implantation of BF2 into the field oxide before the collector and base layers are grown, replacement of the bulk substrate by SOI. It is shown that the maximal decreases of the base current IB and of the spectral density of the 1/f noise SIB are as high as factors of 30 and 8,000, respectively. Therefore, the technology conditions have been indentified to guarantee a sufficiently low level of both excess base current noise and base current.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263312 |
| Date Deposited: | 12 Jan 2007 |
| Last Modified: | 02 Mar 2012 12:59 |
| Contributors: | Lukyanchikova, N. (Author) Garbar, N. (Author) Smolanka, A. (Author) Lokshin, M. (Author) Hall, S. (Author) Buiu, O. (Author) Mitrovic, I.Z. (Author) El Mubarek, H.A.W. (Author) Ashburn, P. (Author) |
| Date: | April 2006 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/263312 |
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