Perimeter crystallization of amorphous silicon around a germanium seed

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Description/Abstract

An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is polycrystalline and made up of grains with various orientations. In contrast, a 60 h anneal at 550°C gives increased a-Si crystallization beneath the entire germanium seed, as reported previously. This perimeter crystallization phenomenon is advantageous because it allows a-Si crystallization to be achieved at a lower thermal budget.