Perimeter crystallization of amorphous silicon around a germanium seed
Hakim, M. M. A, Matko, I., Chenevier, B. and Ashburn, P. (2006) Perimeter crystallization of amorphous silicon around a germanium seed. Electrochemical and Solid State Letters, 9, (7), G236-G238.
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An a-Si crystallization phenomenon that originates from the perimeter of a germanium seed during anneal at 500°C is reported. The perimeter crystallization is reasonably uniform and reaches 500 nm after a 60 h anneal at 500°C. Transmission electron microscopy shows that the crystallized material is polycrystalline and made up of grains with various orientations. In contrast, a 60 h anneal at 550°C gives increased a-Si crystallization beneath the entire germanium seed, as reported previously. This perimeter crystallization phenomenon is advantageous because it allows a-Si crystallization to be achieved at a lower thermal budget.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||08 Feb 2007|
|Last Modified:||20 Aug 2012 04:19|
|Contributors:||Hakim, M. M. A (Author)
Matko, I. (Author)
Chenevier, B. (Author)
Ashburn, P. (Author)
|Publisher:||Electrocmecial Society, USA|
|Further Information:||Google Scholar|
|ISI Citation Count:||1|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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