Enhancement of resistivity of Czochralski silicon by deep level manganese doping
Mallik, K, de Groot, C H, Ashburn, P and Wilshaw, P R (2006) Enhancement of resistivity of Czochralski silicon by deep level manganese doping. Applied Physics Letters, 89, (11), 112122-1.
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 10^14 cm^−2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 ohm cm for the undoped substrate to a maximum of 10 kohm cm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||19 Feb 2007|
|Last Modified:||20 Aug 2012 04:21|
|Contributors:||Mallik, K (Author)
de Groot, C H (Author)
Ashburn, P (Author)
Wilshaw, P R (Author)
|Publisher:||American Institute of Physics|
|Further Information:||Google Scholar|
|ISI Citation Count:||4|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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