Silicon spin diffusion transistor: materials, physics and device characteristics


Dennis, C L, Tiusan, C, Gregg, J F, Ensell, G and Thompson, S M (2005) Silicon spin diffusion transistor: materials, physics and device characteristics. IEE Proceedings - Circuits, Devices and Systems, 152, (4), 340-354.

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Description/Abstract

The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has advanced to consider three-terminal devices that aim to combine spin sensitivity with a high current gain and a large current output. These devices require both efficient spin injection and semiconductor fabrication. In this paper, a discussion is presented of the design, operation and characteristics of the only spin transistor that has yielded a current gain greater than one in combination with reasonable output currents

Item Type: Article
Related URLs:
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 263605
Date Deposited: 23 Feb 2007
Last Modified: 02 Mar 2012 13:41
Contributors: Dennis, C L (Author)
Tiusan, C (Author)
Gregg, J F (Author)
Ensell, G (Author)
Thompson, S M (Author)
Date: August 2005
Status: Published
Further Information:Google Scholar
ISI Citation Count:5
URI: http://eprints.soton.ac.uk/id/eprint/263605

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