Unstable etching of Si(110) with potassium hydroxide
Moktadir, Z and Sato, K (2001) Unstable etching of Si(110) with potassium hydroxide. Phys. Rev. B, 64, 033309.
Full text not available from this repository.
We present experimental data for the morphological evolution of Si(110) etched with potassium hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||26 Mar 2007|
|Last Modified:||15 Aug 2012 03:17|
|Further Information:||Google Scholar|
|ISI Citation Count:||1|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)