Unstable etching of Si(110) with potassium hydroxide


Moktadir, Z and Sato, K (2001) Unstable etching of Si(110) with potassium hydroxide. Phys. Rev. B, 64, 033309.

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Description/Abstract

We present experimental data for the morphological evolution of Si(110) etched with potassium hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263746
Date Deposited: 26 Mar 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
ISI Citation Count:1
URI: http://eprints.soton.ac.uk/id/eprint/263746

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