Unstable etching of Si(110) with potassium hydroxide
Moktadir, Z and Sato, K (2001) Unstable etching of Si(110) with potassium hydroxide. Phys. Rev. B, 64, 033309.
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Description/Abstract
We present experimental data for the morphological evolution of Si(110) etched with potassium hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263746 |
| Date Deposited: | 26 Mar 2007 |
| Last Modified: | 15 Aug 2012 03:17 |
| Contributors: | Moktadir, Z (Author) Sato, K (Author) |
| Date: | 2001 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 1 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263746 |
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