Unstable etching of Si(110) with potassium hydroxide
Moktadir, Z and Sato, K (2001) Unstable etching of Si(110) with potassium hydroxide. Phys. Rev. B, 64, 033309.
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We present experimental data for the morphological evolution of Si(110) etched with potassium hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||26 Mar 2007|
|Last Modified:||27 Mar 2014 20:07|
|Further Information:||Google Scholar|
|ISI Citation Count:||1|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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