Instability in Si(110) etched with tetramethyl ammonium hydroxide
Moktadir, Z and Sato, K (2001) Instability in Si(110) etched with tetramethyl ammonium hydroxide. J. Appl. Phys., 89, 3242.
Full text not available from this repository.
Experimental data for the morphological evolution of etched Si(110) is presented. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of elliptical hollows on the surface. The early stage of the formation of hollows can be explained by a linear theory similar to that which describes the early stage of spinodal decomposition. This instability is caused by anisotropic surface tension.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||26 Mar 2007|
|Last Modified:||15 Aug 2012 03:17|
|Further Information:||Google Scholar|
|ISI Citation Count:||0|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)