Instability in Si(110) etched with tetramethyl ammonium hydroxide

Moktadir, Z and Sato, K (2001) Instability in Si(110) etched with tetramethyl ammonium hydroxide. J. Appl. Phys., 89, 3242.


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Experimental data for the morphological evolution of etched Si(110) is presented. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching which leads to the formation of elliptical hollows on the surface. The early stage of the formation of hollows can be explained by a linear theory similar to that which describes the early stage of spinodal decomposition. This instability is caused by anisotropic surface tension.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263747
Date Deposited: 26 Mar 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
ISI Citation Count:0

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