Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth
Pengpad, P., Osman, K., Lloyd, N.S., Bonar, J.M., Ashburn, P., Kemhadjian, H.A., Hamel, J.S. and Bagnall, D.M. (2004) Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth. Microelectronic Engineering, 73, (6), 508-513.
![[file icon]](http://eprints.soton.ac.uk/style/images/fileicons/application_pdf.png) | PDF Restricted to Registered users only 539Kb |
Description/Abstract
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is described and modelled. Device simulations indicate devices with maximum fT of 22 GHz with peak gain of 95 and fmax of 14 GHz can be obtained by the processes outlined. The simulation results highlight the feasibility of the design and further improvements and scaling of the device would allow the transistor to operate at even higher frequencies and lower power.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| ePrint ID: | 263756 |
| Deposited On: | 27 Mar 2007 |
| Last Modified: | 07 Mar 2012 16:17 |
| Further Information: | Google Scholar |
Associated Staff Only: edit my ePrint
