Wavelet Characterization of the submicron surface roughness of anisotropocally etched silicon


Moktadir, Z and Sato, K (2000) Wavelet Characterization of the submicron surface roughness of anisotropocally etched silicon. Surface Science, 470, L57-L62.

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Description/Abstract

The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263786
Date Deposited: 28 Mar 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263786

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