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Wavelet characterization of the submicron surface roughness of anisotropically etched silicon

Wavelet characterization of the submicron surface roughness of anisotropically etched silicon
Wavelet characterization of the submicron surface roughness of anisotropically etched silicon
The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.
0039-6028
L57-L62
Moktadir, Z.
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K.
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219
Moktadir, Z.
9e14f4f9-7314-4a39-9776-473806c75dd4
Sato, K.
14fbcaeb-f9db-4bb6-b046-fa5e04e4b219

Moktadir, Z. and Sato, K. (2000) Wavelet characterization of the submicron surface roughness of anisotropically etched silicon. Surface Science, 470 (1-2), L57-L62. (doi:10.1016/S0039-6028(00)00895-5).

Record type: Article

Abstract

The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.

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More information

Published date: December 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 263786
URI: http://eprints.soton.ac.uk/id/eprint/263786
ISSN: 0039-6028
PURE UUID: 96a75571-1c5e-428d-b6eb-4ea24b3f2f33

Catalogue record

Date deposited: 28 Mar 2007
Last modified: 14 Mar 2024 07:37

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Contributors

Author: Z. Moktadir
Author: K. Sato

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