Wavelet Characterization of the submicron surface roughness of anisotropocally etched silicon
Moktadir, Z and Sato, K (2000) Wavelet Characterization of the submicron surface roughness of anisotropocally etched silicon. Surface Science, 470, L57-L62.
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The roughness of etched Si(1 10) surfaces in tetra-methyl ammonium hydroxide has been characterized using the wavelet transform formalism. Wavelet coefficients corresponding to the experimental surface profiles have been calculated and the roughness exponent has been derived using the scalegram method. Its value has been found to be 0.5.
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||28 Mar 2007|
|Last Modified:||02 Mar 2012 14:03|
|Contributors:||Moktadir, Z (Author)
Sato, K (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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