Simulation of silicon etching with KOH
Camon, H and Moktadir, Z (1997) Simulation of silicon etching with KOH. Microelectronics Journal, 28, 509-517.
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Description/Abstract
Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated. The atomic scale model proposed is based on the influence of the OH group on chemical bonds. Etch rate and activation energies are calculated and extended to the complete etch rate polar diagram and compared to available experimental data. Finally, an analytical description of etch rate ratios is proposed.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 263805 |
| Date Deposited: | 29 Mar 2007 |
| Last Modified: | 02 Mar 2012 14:03 |
| Contributors: | Camon, H (Author) Moktadir, Z (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 2 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263805 |
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