New trends in atomic scale simulation of wet chemical etching of silicon with KOH


Camon, H, Moktadir, Z and Rouhanie, M. D. (1996) New trends in atomic scale simulation of wet chemical etching of silicon with KOH. Materials Science & Eng. B, 37, 142-145.

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Description/Abstract

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for (110) and (111) surfaces.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263806
Date Deposited: 29 Mar 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
ISI Citation Count:25
URI: http://eprints.soton.ac.uk/id/eprint/263806

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