Atomic scale simulation of silicon etched in aqueous KOH solution
Camon, H and Moktadir, Z (1995) Atomic scale simulation of silicon etched in aqueous KOH solution. Sensors and Actuators A: Physical, 46, 27-29.
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Description/Abstract
In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 263813 |
| Date Deposited: | 30 Mar 2007 |
| Last Modified: | 08 Aug 2012 23:46 |
| Contributors: | Camon, H (Author) Moktadir, Z (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 18 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263813 |
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