Camon, H and Moktadir, Z
Atomic scale simulation of silicon etched in aqueous KOH solution.
Sensors and Actuators A: Physical, 46, .
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In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.
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