Atomic scale simulation of silicon etched in aqueous KOH solution
Camon, H and Moktadir, Z (1995) Atomic scale simulation of silicon etched in aqueous KOH solution. Sensors and Actuators A: Physical, 46, 27-29.
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In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||30 Mar 2007|
|Last Modified:||08 Aug 2012 23:46|
|Contributors:||Camon, H (Author)
Moktadir, Z (Author)
|Further Information:||Google Scholar|
|ISI Citation Count:||18|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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