Atomic scale simulation of silicon etched in aqueous KOH solution


Camon, H and Moktadir, Z (1995) Atomic scale simulation of silicon etched in aqueous KOH solution. Sensors and Actuators A: Physical, 46, 27-29.

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Description/Abstract

In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for <hk0> oriented surfaces like etching rates, and more detailed results for low-index surfaces such as <100> and <111>. For these two directions we present results concerning the surface morphology and the time evolution of the roughness.

Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263813
Date Deposited: 30 Mar 2007
Last Modified: 27 Mar 2014 20:07
Further Information:Google Scholar
ISI Citation Count:18
URI: http://eprints.soton.ac.uk/id/eprint/263813

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