Atomic scale simulation of silicon anisotropic chemical etching


Camon, H, Rouhanie, M D, Esteve, D, Gue, A M and Moktadir, Z (1995) Atomic scale simulation of silicon anisotropic chemical etching. Microsystem Technologies, 1, 163-167.

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Item Type: Article
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 263814
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1995Published
Date Deposited: 30 Mar 2007
Last Modified: 31 Mar 2016 14:08
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/263814

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