Atomic scale simulation of silicon anisotropic chemical etching
Camon, H, Rouhanie, M D, Esteve, D, Gue, A M and Moktadir, Z (1995) Atomic scale simulation of silicon anisotropic chemical etching. Microsystem Technologies, 1, 163-167.
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| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263814 |
| Date Deposited: | 30 Mar 2007 |
| Last Modified: | 08 Aug 2012 23:46 |
| Contributors: | Camon, H (Author) Rouhanie, M D (Author) Esteve, D (Author) Gue, A M (Author) Moktadir, Z (Author) |
| Date: | 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263814 |
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