Unstable Etching Of Si(110) With Potassium Hydroxide
Moktadir, Z, Sato, K, Shimizu, T and Shikida, M (2000) Unstable Etching Of Si(110) With Potassium Hydroxide. In, Materials Research Society, Boston , USA, , EE5.27.1-EE5.27.6.
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Description/Abstract
We present the experimental data for the morphological evolution of Si(110) etched with Potassium Hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching, which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Additional Information: | Event Dates: December 2000 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 263850 |
| Date Deposited: | 04 Apr 2007 |
| Last Modified: | 14 Aug 2012 01:48 |
| Contributors: | Moktadir, Z (Author) Sato, K (Author) Shimizu, T (Author) Shikida, M (Author) |
| Date: | 2000 |
| Additional Information: | Event Dates: December 2000 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 1 |
| URI: | http://eprints.soton.ac.uk/id/eprint/263850 |
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