Unstable Etching Of Si(110) With Potassium Hydroxide
Moktadir, Z, Sato, K, Shimizu, T and Shikida, M (2000) Unstable Etching Of Si(110) With Potassium Hydroxide. In, Materials Research Society, Boston , USA, , EE5.27.1-EE5.27.6.
Full text not available from this repository.
We present the experimental data for the morphological evolution of Si(110) etched with Potassium Hydroxide. The observed results are interpreted using a continuum equation. The results reveal the presence of unstable etching, which leads to the formation of a columnar structure on the surface. The early stage of the formation of this columnar structure can be explained by a linear theory. This instability is caused by anisotropic surface tension.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Event Dates: December 2000|
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
|Date Deposited:||04 Apr 2007|
|Last Modified:||27 Mar 2014 20:07|
|Further Information:||Google Scholar|
|ISI Citation Count:||1|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)